Synthesis and characterization of Bi-doped g-C3N4 for photoelectrochemical water oxidation

材料科学 分解水 介电谱 兴奋剂 傅里叶变换红外光谱 带隙 光电化学电池 光电化学 光致发光 分析化学(期刊) 光谱学 化学工程 光催化 电解质 电化学 电极 光电子学 化学 催化作用 物理化学 生物化学 色谱法 工程类 冶金 物理 量子力学
作者
Waleed M. A. El Rouby,Ahmed Esmail A. Aboubakr,Malik Dilshad Khan,Ahmed A. Farghali,Pierre Millet,Neerish Revaprasadu
出处
期刊:Solar Energy [Elsevier BV]
卷期号:211: 478-487 被引量:37
标识
DOI:10.1016/j.solener.2020.09.008
摘要

Photoelectrochemical (PEC) water splitting has emerged as a promising technology for the storage of renewable energy sources, via the production of hydrogen, a clean and multi-purpose chemical energy vector. The key component in a PEC cell is the photoanode where light energy is absorbed and transformed into electron-hole pairs of appropriate energy for water photo-oxidation. We report on the synthesis of g-C3N4 materials, with an elongated nano-structure, fabricated by the direct pyrolysis of supramolecular melamine used as a chemical precursor. The as-prepared material was used to host specific amounts of bismuth, a doping element used to adjust the band gap of the hosting matrix. The presence of Bi in the photoanodes was confirmed by energy dispersive x-ray analysis (EDX) analysis. Powder X-ray (p-XRD) and Fourier transform infrared (FT-IR) measurements performed on the photoanodes confirmed the absence of Bi-based oxides, and showed that bismuth may bonded to nitrogen atoms inside the voids of the g-C3N4 skeleton. Differential reflective spectroscopy (DRS) measurements revealed that the band gap energy was reduced upon introduction of Bi into g-C3N4. From photoluminescence (PL) plots, it was observed that the 2.5% Bi doping induced a 6-fold electron-hole separation, compared to the pristine g-C3N4. PEC water splitting measurements showed that 2.5% Bi doping approximately doubled the activity of g-C3N4 towards water oxidation. Electrochemical impedance spectroscopy (EIS) measurements showed that Bi doping was an effective method for decreasing the charge transfer across the electrode/electrolyte interface; 2.5% Bi-g-C3N4 was reduced by around 2.4 times compared to that of pristine g-C3N4. Bode-phase plots accompanied EIS spectra revealed that the lifetime of the photo-generated electrons in neat g-C3N4 was improved as a result of Bi doping. The band gaps and the positions of the valence and conduction bands were determined from Mott–Schottky plots.

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