Strategic heating for growing perovskite single crystals

The development of perovskite-based high-performance optoelectronic devices requires the growth and fabrication of perovskite single-crystal thin films (PeSCTFs). Recently, scientists at the Southern University of Science and Technology demonstrated a new crystal growth strategy that achieved PeSCTFs on transport layers with a high area-to-thickness ratio by using gradient heating nucleation and room temperature growth. The resulting formamidinium lead bromide PeSCTFs exhibit a record low trap density and high carrier mobility. This method can be potentially applied to PeSCTFs of various compositions on different transport layers, making it a versatile technology for developing high-performance perovskite optoelectronics. The development of perovskite-based high-performance optoelectronic devices requires the growth and fabrication of perovskite single-crystal thin films (PeSCTFs). Recently, scientists at the Southern University of Science and Technology demonstrated a new crystal growth strategy that achieved PeSCTFs on transport layers with a high area-to-thickness ratio by using gradient heating nucleation and room temperature growth. The resulting formamidinium lead bromide PeSCTFs exhibit a record low trap density and high carrier mobility. This method can be potentially applied to PeSCTFs of various compositions on different transport layers, making it a versatile technology for developing high-performance perovskite optoelectronics.