Numerical Study of Continuous Czochralski (Ccz) Silicon Single Crystal Growth in a Double-Side Heater

The results of a numerical simulation of a continuous Czochralski (CCz) silicon single crystal growth process show that the crystal-melt interface deflection, the oxygen content, and the heating power consumption can be lessened by controlling the lengths and the power ratio between the lower and upper side heaters (i.e., PRSD). The ratio of power between the bottom and side heaters (i.e., PRBS) is kept at a constant value of 0.1. The turbulence of the melt flow is stabilized and the temperature along the bottom crucible wall is reduced at low PRSD values. These decrease the oxygen content at the growth interface as compared to the case for a single side heater (SSH). Using a low PRSD is also expected to increase the pulling speed. Moreover, the temperature in the outer melt zone can be increased under this condition. This is beneficial for the melting of the granular silicon. A flatter crystal-melt interface shape can be obtained using the DSH design at a low PRSD. However, the power consumptions of these cases are higher than for the SSH case. It is possible to obtain a lower heater power with a higher PRSD value.