甲脒
非阻塞I/O
钙钛矿(结构)
卤化物
串联
材料科学
锡
带隙
光电子学
化学
无机化学
结晶学
复合材料
冶金
生物化学
催化作用
作者
Yuan Zhou,Zhen Wang,Junjun Jin,Xiang Zhang,Junjie Zou,Fang Yao,Zhenkun Zhu,Xiaxia Cui,Dan Zhang,Yanhua Yu,Cong Chen,Dewei Zhao,Qiang Cao,Qianqian Lin,Qidong Tai
标识
DOI:10.1002/anie.202300759
摘要
Low band gap tin-lead perovskite solar cells (Sn-Pb PSCs) are expected to achieve higher efficiencies than Pb-PSCs and regarded as key components of tandem PSCs. However, the realization of high efficiency is challenged by the instability of Sn2+ and the imperfections at the charge transfer interfaces. Here, we demonstrate an efficient ideal band gap formamidinium (FA)-based Sn-Pb (FAPb0.5 Sn0.5 I3 ) PSC, by manipulating the buried NiOx /perovskite interface with 4-hydroxyphenethyl ammonium halide (OH-PEAX, X=Cl- , Br- , or I- ) interlayer, which exhibits fascinating functions of reducing the surface defects of the NiOx hole transport layer (HTL), enhancing the perovskite film quality, and improving both the energy level matching and physical contact at the interface. The effects of different halide anions have been elaborated and a 20.53 % efficiency is obtained with OH-PEABr, which is the highest one for FA-based Sn-Pb PSCs using NiOx HTLs. Moreover, the device stability is also boosted.
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