过电位
材料科学
催化作用
氧气
电子转移
析氧
原子轨道
空位缺陷
兴奋剂
解吸
分解水
化学工程
光化学
纳米技术
化学物理
电子
光催化
物理化学
有机化学
结晶学
光电子学
化学
物理
工程类
电化学
电极
生物化学
量子力学
吸附
作者
Na Luo,Ao Cai,Junhui Pei,Xiongfeng Zeng,Xing Wang,Na Yao
标识
DOI:10.1002/adfm.202425503
摘要
Abstract Oxygen vacancy (V O ) engineering is widely regarded as a key strategy for enhancing CoMo‐based catalysts for oxygen evolution reaction (OER) while understanding their formation mechanisms and role in boosting OER activity remains a significant challenge. Herein, a CoMoO x system doped is developed with different 3 d ‐orbital atoms M (V, Ni, Zn, and Mn) to investigate the construction and stabilization of V O and its crucial role in OER performance. In situ and ex situ measurements along with theoretical calculations demonstrate that V doping adjusts the bandgap between the CoMo‐ d and O ‐p orbitals, leading to the transfer of electrons from the O‐ p orbitals to the M‐ d orbitals, thereby promoting the formation of V O . The formation of V O leads to an upshifted d ‐band center, optimizing the desorption of oxygen intermediates on V O ‐CoMoVO x and lowering the energy barrier of the rate‐determining step (RDS), thereby enhancing the catalyst's activity. Additionally, V doping promotes electron transfer from Co to V atoms, stabilizing the V O and ultimately improving the catalyst's stability. The resulting V O ‐CoMoVO x catalyst delivered attractive activity (overpotential of 248 mV at 10 mA cm −2 ) and durability over 600 h. This study offers a rational method for designing efficient OER electrocatalysts.
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