外延
原子单位
材料科学
堆积
薄膜
从头算量子化学方法
从头算
化学物理
半导体
凝聚态物理
光电子学
晶体孪晶
结晶学
制作
纳米技术
化学
微观结构
物理
病理
有机化学
医学
冶金
量子力学
替代医学
图层(电子)
分子
作者
J.X. Zhang,J. Zhao,Junting Chen,Mengyuan Hua
摘要
β-Ga2O3 has been subjected to intense research interest as an ultrawide bandgap semiconductor. The epitaxial growth technique of β-Ga2O3 thin films plays a fundamental and vital role in Ga2O3-based device fabrication. In this work, the epitaxial growth mechanisms of β-Ga2O3 on four low-Miller-index facets, (100), (010), (001), and (2¯01), are systematically explored using large-scale machine-learning molecular dynamics simulations at the atomic scale. The simulations reveal that the migration of the face-centered cubic stacking O sublattice plays a dominant role in the different growth mechanisms between the (100)/(010)/(001) and (2¯01) orientations. The resultant complex combinations of the stacking faults and twin boundaries are carefully identified and show good agreement with experimental observations and ab initio calculations. Our results provide useful insights into the gas-phase epitaxial growth of β-Ga2O3 thin films and suggest possible ways to tailor its properties for specific applications.
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