绝缘体上的硅
MOSFET
兴奋剂
光电子学
材料科学
电气工程
工程类
硅
晶体管
电压
作者
Hui Xu,Guo Wei Cui,Yong Li,Wen Sun,Kui Xia,Chao He
标识
DOI:10.35848/1347-4065/ad27a2
摘要
Abstract A two-dimensional (2D) analytical model considering the effects of the gate oxide region, channel region, and buried oxide region for a non-lightly doped drain (LDD) SOI MOSFET is proposed. The top and bottom surface potential distributions have been derived on the basis of solving 2D Poisson’s equation and using an evanescent mode analysis. The potential distribution, threshold voltage, and threshold voltage roll-off have been verified by Silvaco ATLAS simulated results for the proposed device with different device parameters. The model agrees well with the simulation results under the above-mentioned conditions. Therefore, the analytical model provides the basic designing guidance for non-LDD SOI MOSFETs.
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