The effect of boron on the structure and lattice parameters of diamond single crystals

Boron doped diamonds (BDD) with boron concentration above 1019 at./cm3, grown under conditions of high isostatic pressure by the temperature gradient method, were studied by Transmission Electron Microscopy methods, EELS analysis and X-ray diffraction analysis. It was shown that boron is distributed unevenly in the grown crystal. It was found that in places of maximum boron content, interplanar distances d111 increase from 0.206 to approximately 0.2065 nm. Parallel bands were discovered, the boundaries of which are fragments of the intermediate carbon phase (ICP-phase). Numerous twins along the {111} plane, as well as fragments of rhombohedral 9R phase, were discovered.