模具(集成电路)
薄脆饼
材料科学
硅
冶金
纳米技术
光电子学
作者
Gauri Karve,Yunlong Li,Vasyl Motsnyi,Wei Wei,Jakob Visker,François Chancerel,J. Ackaert,Renaud Puybaret,B. Dutta,Deniz Sabuncuoglu Tezcan,Lan Peng,Philippe Soussan,S. Severi,Haris Osman
标识
DOI:10.35848/1347-4065/ad32e2
摘要
Abstract Co-integration of III-V and silicon on the same substrate can enable many applications in photonics, RF, imaging, and sensing. Wafer reconstitution (WARE) is an embedded multi-die integration platform that allows for the integration of heterogenous materials on 200/300 mm Si substrates. This paper describes an integration flow for InP dies attached to 200 mm silicon. Electrical measurements on InGaAs diodes fabricated on WARE wafers confirm that the performance is similar to devices on native InP substrates.
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