薄膜晶体管
材料科学
制作
结晶
掺杂剂活化
晶体管
光电子学
微晶
掺杂剂
电气工程
纳米技术
兴奋剂
电压
图层(电子)
化学
冶金
医学
替代医学
工程类
病理
有机化学
作者
Linyu Huang,Kenta Moto,Kota Igura,Takamitsu Ishiyama,Kaoru Toko,Dong Wang,Keisuke Yamamoto
标识
DOI:10.35848/1347-4065/ad13a1
摘要
Abstract We fabricated an inversion mode n-channel thin-film-transistor (TFT) on polycrystalline (poly-) Ge at low temperatures for monolithic three-dimensional large-scale IC (3D-LSI) and flexible electronics applications. Based on our previously reported solid-phase crystallization (SPC) method, we designed an n-channel TFT fabrication process with phosphorous ion implantation to provide the source/drain (S/D). We succeeded in fabricating an n-channel TFT with typical electrical characteristics on poly-Ge and confirmed its operation mode to be inversion mode. However, the fabrication process included a high temperature (500 °C) step for S/D activation. To reduce the process temperature, we used a metal-induced dopant activation method and successfully reduced the activation temperature to 360 °C. This combination is expected to pave the way for high-performance 3D-LSI and flexible electronic devices based on SPC-Ge.
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