Photosensing properties of zinc nitride thin-film transistors fabricated on recyclable plastic substrates

In this work, the characterization of zinc nitride (Zn 3 N 2 ) Thin-film Transistors (TFTs) as phototransistors is presented. Polyethylene terephthalate is used as recyclable plastic substrate. A zinc oxide (ZnO) film is used as passivation layer. The Zn 3 N 2 and ZnO films are deposited at room temperature using a magnetron sputtering. The sensitivity, responsivity and detectivity were extracted and analyzed. Interestingly, a relation between the maximum value of detectivity and the threshold voltage V T was found. Moreover, the electrical characteristics are analyzed after 100 days on air to evaluate the stability under ambient conditions.