欧姆接触
调车
分流(医疗)
电压
材料科学
电致发光
计算机科学
光电子学
光伏系统
电流(流体)
电子工程
电气工程
纳米技术
神经科学
生物
工程类
医学
心脏病学
图层(电子)
作者
Ravi Kumar,Vishal E. Puranik,Rajesh Gupta
出处
期刊:IEEE Journal of Photovoltaics
日期:2024-03-01
卷期号:14 (2): 296-304
标识
DOI:10.1109/jphotov.2024.3357210
摘要
Photovoltaic (PV) technology is susceptible to various defects and degradations. One such defect is shunts, which result in internal leakage paths, reducing cell performance and efficiency. Shunts can be categorised as either ohmic or non-ohmic based on the nature of sinking current with voltage. Understanding the nature of shunting is crucial for comprehending the physical phenomena occurring at shunted sites. However, current methods such as dark lock-in thermography and current-voltage ( I–V) characteristics have limitations in nondestructive characterisation of cells within an intact PV module, which require individual cell access. This article presents a novel application of electroluminescence (EL) imaging to distinguish between ohmic and non-ohmic shunting in cells within a module nondestructively. The method involves a two-step process using three EL images at different currents. Firstly, shunted and nonshunted cells are differentiated based on low current EL image. In the second step, ohmic and non-ohmic shunted cells are distinguished using Shunt-Index value based on current-EL intensity characteristics. Non-ohmic shunted cells show a linear behaviour on a log-log scaled current-EL intensity characteristics, while ohmic shunted cells exhibit a linear behaviour. Experimental validation demonstrates the successful identification of shunted cells and their nature, providing valuable insights for shunt-related PV cell analysis.
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