Optomechanical tuning of electroresistance in 2D ferroelectric α-In2Se3

Recent advances in the exploration of two-dimensional (2D) van der Waals (vdW) ferroelectrics revealed not only a wealth of fundamentally exciting properties but also a strong potential for nanoelectronic applications facilitated by their semiconducting nature and tunable polarization-coupled physical properties. Here, using scanning probe microscopy techniques, we investigate the effects of mechanical stress and optical illumination on the transport behavior of one of the most actively studied 2D ferroelectrics, α-In2Se3. Local I–V measurements reveal a strongly asymmetric polarization-dependent conductivity of α-In2Se3, which can be continuously tuned by the tip-induced mechanical pressure. While the local conductivity increases up to two orders of magnitude for both polarization states, the upward polarization displays a much sharper change. Further enhancement of conductivity by an order of magnitude is observed under optical illumination, resulting from a cumulative modulation of the junction barrier via polarization, strain, and optical excitation. The obtained results make α-In2Se3 a promising material for application in electronic devices with optomechanical functionality.