500 V breakdown voltage in β ‐Ga 2 O 3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm 2 power figure of merit

Abstract The authors’ present a silicon‐on‐insulator (SOI) laterally diffused metal‐oxide‐semiconductor field‐effect transistor (LDMOSFET) with β ‐Ga 2 O 3 , which is a large bandgap semiconductor (β‐LDMOSFET), for increasing breakdown voltage (V BR ) and power figure of merit. The fundamental purpose is to use a β ‐Ga 2 O 3 semiconductor instead of silicon material due to its large breakdown field. The characteristics of β ‐LDMOSFET are analysed to those of standard LDMOSFET, such as V BR , ON‐resistance (R ON ), power figure of merit (PFOM), and radio frequency (RF) performances. The effects of RF, such as gate‐drain capacitance (C GD ), gate‐source capacitance (C GS ), transit frequency ( f T ), and maximum frequency of oscillation ( f MAX ) have been investigated. The β ‐LDMOSFET structure outperforms performance in the V BR by increasing it to 500 versus 84.4 V in standard LDMOSFET design. The suggested β ‐LDMOSFET has R ON ~ 2.3 mΩ.cm −2 and increased the PFOM (V BR 2 /R ON ) to 108.6 MW/cm 2 . All the simulations are done with TCAD and simulation models are calibrated with the experimental data.