计量学
像素
光学
表面光洁度
GSM演进的增强数据速率
平版印刷术
表面粗糙度
直线(几何图形)
噪音(视频)
线条宽度
计算机科学
物理
图像(数学)
数学
材料科学
人工智能
几何学
复合材料
量子力学
作者
George Papavieros,Vassilios Constantoudis,Ν. Vouroutzis,Εvangelos Gogolides
出处
期刊:Journal of micro/nanopatterning, materials, and metrology
[SPIE - International Society for Optical Engineering]
日期:2021-08-19
卷期号:20 (03)
被引量:1
标识
DOI:10.1117/1.jmm.20.3.034001
摘要
In this work, we present a sound mathematical result that may correct the pixelization bias in the calculation of the line edge roughness (LER) even when the pixel size of SEM images is much larger than its rms value. This result can be useful in the LER metrology of current and future lithographic patterns where the desired rms value of LER is in the deep sub-nm range and smaller than the used pixel sizes. We computationally justify the predictions of the mathematical result and then demonstrate its application in synthesized SEM images where we can separate the impact of noise and focus on the pixelization effects in LER measurements. Furthermore, this result emphasizes the power of mathematical and computational methods to enhance the metrological output of SEM images in deep nanometer scale.
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