光电流
光电二极管
量子隧道
光电子学
周长
GSM演进的增强数据速率
耗尽区
暗电流
p-n结
载流子
材料科学
物理
半导体
分析化学(期刊)
化学
计算机科学
光电探测器
人工智能
数学
几何学
色谱法
作者
Chun‐Chieh Yang,Jenn‐Gwo Hwu
出处
期刊:IEEE Sensors Journal
[Institute of Electrical and Electronics Engineers]
日期:2012-06-01
卷期号:12 (6): 2313-2319
被引量:20
标识
DOI:10.1109/jsen.2012.2187886
摘要
On account of edge fringing field effect, deep depletion would happen and charge collection would be largely enhanced at edge. Hafnia (HfO 2 )/SiO 2 -stacked metal-oxide-semiconductor photodiode is proposed and perceived by analyzing the photocurrents with various elongated edge perimeter. This structure of HfO 2 /SiO 2 exhibits an enhanced edge charge collection characteristic that could be applied to generate the considerable photocurrent in magnitude. Higher tunneling probability in the deeper depletion region at edge makes explicitly larger portion of current, pass through this area due to edge fringing field effect. Under illumination, photo-excited charge collection would be largely enhanced at the edge. Moreover, responsivity R and photosensitivity Ps, which were evaluative figures for photo-electrical applications, were examined and discussed. The slope \mmbκ of photo-current versus irradiance curves reaches to 1.59 which is feasible for image sensor. These results are attributed to the enhanced edge-deep depletion absorption of light due to edge-fringing field effect.
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