正电子
正电子湮没
消灭
半导体
材料科学
原子物理学
正电子寿命谱学
正电子发射断层摄影术
物理
核物理学
凝聚态物理
核医学
电子
光电子学
医学
作者
Chen Xiang-Lei,Jie Zhang,Du Huai-Jiang,Zhou Xian-Yi,Bangjiao Ye
出处
期刊:Chinese Physics
[Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences]
日期:2010-01-01
卷期号:59 (1): 603-603
摘要
On the basis of of local density approximation (LDA) and general gradient approximation (GGA), positron annihilation information has been calculated for five types of compound semiconductors, which are ZnO, GaN, GaAs, SiC and InP. The calculated information includes distribution of positron density, distribution of positron annihilation rate density, positron bulk lifetime, positron monovacancy lifetime and positron divacancy lifetime.
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