泄漏(经济)
氢
铂族
铂金
肖特基势垒
金属
材料科学
还原(数学)
肖特基二极管
化学
光电子学
冶金
催化作用
数学
几何学
二极管
宏观经济学
经济
有机化学
生物化学
作者
David E. Aspnes,Adam Heller
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:1983-01-01
卷期号:1 (3): 602-602
被引量:45
摘要
Current–voltage (I–V), capacitance–voltage (C–V), and photovoltage (PV) data are obtained for Ru, Rh, Pd, Os, Ir, and Pt contacts deposited on chemically cleaned 〈100〉 n‐GaAs wafers. By explicitly evaluating the relevant equations using realistic values of all parameters, we show that the currents obtained for small voltages are far too large to be explained by thermionic or recombination effects alone but are indicative of barrier height variations as proposed by Freeouf et al. We used the fact that the thermionic emission component is always present to reconcile the difference between apparent barrier heights determined by I–V and C–V measurements to obtain a consistent set of values for all materials. Upon exposure of the Ru and Ir contacts to atmospheric‐pressure hydrogen, the barrier heights are reduced by 160 and 70 mV, respectively, and the ideality factors by 0.3 and 0.3, showing that hydrogen simultaneously lowers the barrier height and makes it more uniform over the contact for these junctions. ...
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