In-situ cleaned high-quality InGaAlAs-InGaAsP butt-joint grown by metal-organic vapor phase epitaxy

High-quality butt-joint-based hetero-integration of InGaAlAs and InGaAsP was successfully demonstrated. A new in-situ cleaning process in an MOVPE reactor effectively removed aluminum oxides on the regrown interface, so a flat lateral butt-jointed hetero-interface was obtained. The losing characteristic of novel multiple butt-jointed lasers formed by this process showed high optical-coupling efficiency of approximately 98%, which is comparable to that of a conventional InGaAsP-InGaAsP BJ.