Virtual fabrication using directed self-assembly for process optimization in a 14nm DRAM

For Directed Self-Assembly (DSA) to be deployed in advanced semiconductor technologies, it must reliably integrate into a full process flow. We present a methodology for using virtual fabrication software, including predictive DSA process models, to develop and analyze the replacement of SAQP patterning with LiNe chemoepitaxy on a 14nm DRAM process. To quantify the impact of this module replacement, we investigate a key process yield metric for DRAM: interface area between the capacitor contacts and transistor source/drain. Additionally, we demonstrate virtual fabrication of the DRAM cell's hexagonally-packed capacitors patterned with an array of diblock copolymer cylinders in place of LE4 patterning.