材料科学
镓
荧光
铜
兴奋剂
量子点
硫化物
硫化铜
硫化锌
纳米技术
无机化学
光电子学
锌
冶金
光学
化学
物理
作者
Dae‐Yeon Jo,Daekyoung Kim,Jong‐Hoon Kim,Heeyeop Chae,Hyo Jin Seo,Young Rag,Heesun Yang
标识
DOI:10.1021/acsami.6b01763
摘要
Fluorescence of semiconductor quantum dots (QDs) can be tuned by engineering the band gap via size and composition control and further doping them with impurity ions. Targeting on highly bright white-emissive I-III-VI -type copper gallium sulfide (Cu-Ga-S, CGS) host QDs with the entire visible spectral coverage of blue to red, herein, Mn(2+) ion doping, through surface adsorption and lattice diffusion is fulfilled. Upon doping a distinct Mn emission from (4)T1-(6)A1 transition successfully appears in white photoluminescence (PL) of undoped CGS/ZnS core/shell QDs and with varying Mn concentration a systematic white spectral evolution of CGS:Mn/ZnS QDs is achievable with high PL quantum yield retained. The origins of white PL of CGS:Mn/ZnS QDs that is well decomposed into three emission bands are appropriately assigned. The resulting single-phased, doped QDs are then employed as near-UV-to-white down converters for the fabrication of white light-emitting diodes (LEDs). Electroluminescent properties of white QD-LEDs depending on Mn concentration of CGS:Mn/ZnS QDs and forward current are also discussed in detail.
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