GaN-SiC and GaN-diamond integration via room temperature bonding

In this work, the room temperature bonding of GaN-SiC and GaN-diamond were achieved by surface activated bonding (SAB) methods. Both of the structure and composition of the bonding interfaces were investigated to understand the bonding mechanisms. The results indicate that SAB methods have a great potential for the integration of GaN onto SiC and diamond substrates with a high thermal conductivity.