硅
材料科学
氮化硅
拉曼光谱
渗氮
集聚经济
氮化物
纳米晶硅
热重分析
化学工程
冶金
分析化学(期刊)
矿物学
晶体硅
纳米技术
化学
图层(电子)
有机化学
光学
工程类
非晶硅
物理
作者
Jinguang Yang,Ping Wu,Li Wang,Shiping Zhang,Dongpeng Yan,Yanan Li
摘要
Abstract The melt of silicon, hindering nitridation for its agglomeration, should be avoided in the direct nitridation of silicon to synthesize silicon nitride powders, although liquid phase facilitates nitridation. Therefore, we proposed a method to nitride molten silicon without agglomeration. Thermogravimetric and in situ Raman studies on the nitridation process of molten silicon were performed. The as‐prepared silicon nitride samples were found to be micron clusters composed of submicron grains with high α‐Si 3 N 4 content. The nitridation of molten silicon at 1500°C was completed after 500 s and 109 times faster than the nitridation of solid silicon at 1350°C. β‐Si 3 N 4 is produced dominantly by α–β‐phase transition. Less nitridation time and low temperature can decrease the β‐Si 3 N 4 content. The rapid nitridation was owning to core–shell structure Si@Si 3 N 4 , which was formed after the initial nitridation of silicon particles and hindered the agglomeration of molten silicon.
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