晶体管
光电探测器
光电子学
材料科学
场效应晶体管
半导体
电子迁移率
薄膜晶体管
纳米技术
图层(电子)
电气工程
电压
工程类
作者
Weike Wang,Liang Li,Zhitao Zhang,Jiyong Yang,Dongsheng Tang,Tianyou Zhai
摘要
We exfoliated bulk GaGeTe crystals down to ultrathin flakes using the scotch tape method and fabricated field effect transistors (FETs). The GaGeTe FETs display a p-type behavior with drain current modulation on the order of 103, hole mobility of 0.45 cm2 V−1 s−1, and photoresponsivity of 3.6 A W−1 at room temperature. These findings suggest that the layered GaGeTe is a promising 2D semiconductor for fabricating devices, such as transistors and photodetectors.
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