硫系化合物
纳秒
材料科学
非易失性存储器
无定形固体
相变存储器
电压
肖特基二极管
光电子学
纳米技术
电气工程
光学
化学
激光器
结晶学
物理
工程类
图层(电子)
二极管
作者
Jiabin Shen,Shujing Jia,Nannan Shi,Qingqin Ge,Tamihiro Gotoh,Shilong Lv,Qi Liu,Richard Dronskowski,Stephen R. Elliott,Zhitang Song,Min Zhu
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:2021-12-09
卷期号:374 (6573): 1390-1394
被引量:128
标识
DOI:10.1126/science.abi6332
摘要
Single element switch Phase-change materials are attractive for computer memory and switching, in part due to their small size and fast switching speeds. However, competitive materials frequently have many elements, which decreases the switching reliability. Shen et al . built a pure tellurium device that is capable of fast switching through a phase transformation (see the Perspective by Calarco and Arciprete). Unlike many other phase-change materials, the change in resistance happens because the tellurium melts during the switching process. The resulting device can be switched 100 million times before failure and is an appealing route for avoiding the issues from multi-element phase-change materials. —BG
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