A One-Dimensional Physics-Based Compact Model of Reverse Blocking IGCT Devices

Integrated gate commutated thyristors (IGCTs) have the potential to be applied in power electronic systems of DC grid. The reverse blocking IGCT (RB-IGCT) is a full-controlled device with the ability to withstand reverse voltages, which can be applied into DC breakers and converters. A one-dimensional physics-based compact model of RB-IGCT devices has been proposed in this paper. The compact model takes into account the moving boundaries of carrier storage region in N base region, with the variable widths of J1 depletion layer and J2 depletion layer. The model can simulate both external electrical waveforms and internal physical information such as carrier density distribution of RB-IGCT devices under different conditions, including triggered turn-on/turn-off processes and reverse blocking process. The RB-IGCT compact model is expected to be applied in the simulation of core equipment in DC grid and provide reference for device selection and circuit design in the near future.