材料科学
记忆电阻器
卤化物
铋
光伏
光电子学
二极管
纳米技术
光电探测器
铯
发光二极管
溶解
光伏系统
化学工程
无机化学
电气工程
工程类
化学
冶金
作者
Yanqiang Hu,Shufang Zhang,Xiaoliang Miao,Liushuai Su,Fan Bai,Ting Qiu,Jizi Liu,Guoliang Yuan
标识
DOI:10.1002/admi.201700131
摘要
Methylammonium lead halide (MAPbX 3 ) perovskites have attracted tremendous attention due to their remarkable performances in solar cells, light‐emitting diodes, photodetectors, lasers, and electronic memories. However, the issue of toxicity still greatly restricts their further large‐scale applications. Here, this study presents a series of nontoxic and stable methylammonium (or cesium) bismuth halides A 3 Bi 2 I 9 (A = Cs + and MA + ) nanosheets for using in flexible memories. The ultrathin A 3 Bi 2 I 9 nanosheets can be easily prepared by a dissolution–recrystallization process. This is the first attempt that reports the ultrathin bismuth halides and explores their potential applications in flexible electronic devices. The flexible memristors based on such ultrathin Cs 3 Bi 2 I 9 nanosheets exhibit typical bipolar resistive switching behavior and remarkable characteristics such as high R on / R off ratio (≈10 3 ), very low working voltage (≈0.3 V), and long data retention (>10 4 s), as well as excellent endurability, reproducibility, environmental stability, and flexibility. With such appealing characteristics, the cesium bismuth halide memristors have great potential for practical applications. The results of this work demonstrate that cesium bismuth halide ultrathin nanosheets will be promising candidates for more emerging applications in electronics and optoelectronics such as memories, photodetectors, photovoltaics, and light‐emitting diodes.
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