材料科学
半导体
离子注入
光电流
场效应晶体管
光电子学
光电效应
晶体管
光致发光
离子
杂质
光电二极管
拉曼光谱
电气工程
电压
化学
光学
物理
有机化学
工程类
作者
Heyi Li,Chaoming Liu,Yanqing Zhang,Tianqi Wang,Hongqiang Zhang,Pengfei Li,Chenze Qi,Mingxue Huo,Shuangshi Dong
标识
DOI:10.1002/pssa.202100551
摘要
Ion implantation is widely used in the semiconductor industry as an important method of controlling the performance of semiconductor materials. As a 2D material with fantastic physical characteristics, MoS 2 has been receiving extensive attention for its potential applications in electronic devices. N element is an impurity objectively existing in semiconductors. It may come from the semiconductor manufacturing process or the environment. Therefore, the effect of N element implantation on the material, electrical, and photoelectronic properties of MoS 2 field effect transistor (FET) is reported. The results of Raman and photoluminescence (PL) shows that N‐ion implant caused the expansion of the MoS 2 lattice and the disappearance of the characteristic peaks of PL. The prepared MoS 2 FET exhibits a slow photoelectric response to 254 nm UV, and a fast photoelectric response to 650 and 532 nm lasers. After ion implant and annealing, the electrical performance and photocurrent of the MoS 2 FET are significantly degraded. The research has a guiding role in impurity control in the semiconductor manufacturing process.
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