跨导
接触电阻
晶体管
材料科学
电子迁移率
光电子学
肖特基势垒
电导
场效应晶体管
阈值电压
电压
凝聚态物理
纳米技术
电气工程
物理
二极管
工程类
图层(电子)
作者
Hsiao Yu Chang,Weinan Zhu,Deji Akinwande
摘要
Contact resistance (Rc) can substantially obscure the extracted mobility based on standard transconductance or two-point conductance measurements of field-effect devices especially for low density of states materials such as MoS2 or similar atomic crystals. Currently, there exists a pressing need for a routine technique that can decouple mobility extraction from Rc. By combining experiments and analysis, we show that the Y-function method offers a robust route for evaluating the low-field mobility, threshold voltage and Rc even when the contact is a Schottky-barrier as is common in two-dimensional transistors. In addition, an independent modified transfer length method evaluation corroborates the Y-function analysis.
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