材料科学
氧化物
远程等离子体
化学气相沉积
俄歇电子能谱
沉积(地质)
电介质
光电子学
等离子体
原子层沉积
分析化学(期刊)
化学工程
图层(电子)
纳米技术
化学
冶金
古生物学
物理
量子力学
色谱法
沉积物
核物理学
工程类
生物
作者
Choelhwyi Bae,G. Lucovsky
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2004-10-20
卷期号:22 (6): 2402-2410
被引量:30
摘要
In previous studies, device-quality Si-SiO2 interfaces and dielectric bulk films (SiO2) were prepared using a two-step process: (i) remote plasma-assisted oxidation (RPAO) to form a superficially interfacial oxide (∼0.6nm) and (ii) remote plasma-enhanced chemical vapor deposition (RPECVD) to deposit the oxide film. The same approach has been applied to the GaN-SiO2 system. Without an RPAO step, subcutaneous oxidation of GaN takes place during RPECVD deposition of SiO2, and on-line Auger electron spectroscopy indicates a ∼0.7-nm subcutaneous oxide. The quality of the interface and dielectric layer with/without RPAO process has been investigated by fabricated GaN metal-oxide-semiconductor capacitors. Compared to single-step SiO2 deposition, significantly reduced defect state densities are obtained at the GaN-SiO2 interface by independent control of GaN-GaOx interface formation by RPAO and SiO2 deposition by RPECVD.
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