High‐Current‐Density Monolayer CdSe/ZnS Quantum Dot Light‐Emitting Devices with Oxide Electrodes

Films of semiconductor quantum dots (QDs) are promising for lighting technologies, but controlling how current flows through QD films remains a challenge. A new design for a QD light-emitting device that uses atomic layer deposition to fill the interstices between QDs with insulating oxide is introduced. It funnels current through the QDs themselves, thus increasing the light emission yield.