二硼烷
硅烷
拉曼光谱
硅
化学气相沉积
兴奋剂
分析化学(期刊)
等离子体增强化学气相沉积
材料科学
掺杂剂
微晶
硅烷
硼
氢
化学
纳米技术
结晶学
光学
有机化学
光电子学
复合材料
物理
作者
Rosari Saleh,N. H. Nickel
标识
DOI:10.1016/s0040-6090(02)01203-8
摘要
The boron-doped microcrystalline silicon (μc-Si:H) films have been deposited in a plasma-enhanced chemical vapor deposition system using hydrogen (H2) as a diluent gas of silane (SiH4) and diborane (B2H6) as the dopant gas at several gas phase doping ratios. The structural properties of the films have been investigated by Raman measurements. The Raman spectroscopy revealed that the increase of diborane gas phase doping ratio to silane reduces the crystalline volume fraction (XC) and changes the nature of the hydrogen bonded silicon in the films.
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