光电探测器
响应度
光电子学
光电导性
材料科学
肖特基势垒
暗电流
纳米线
光电效应
石墨烯
肖特基二极管
光学
纳米技术
物理
二极管
作者
Peng Liu,Bang Li,Xin Yan,Xia Zhang,Xiaomin Ren
出处
期刊:Sixth Symposium on Novel Optoelectronic Detection Technology and Applications
日期:2020-04-17
摘要
A composite photodetector was fabricated by using InAs nanowires and single-layer graphene. Under positive/negative bias, the device exhibits the response characteristics of a negative photoconductive photodetector and a Schottky junction photodetector, respectively. Under positive bias, the device is a negative photoconductive photodetector. The response current is less than the dark current. The maximum responsivity of the device is 736.4A/W, and there is also a significant response current in the case of low illumination intensity. Under negative bias, the device is a Schottky junction photodetector with a maximum response of 9.4A/W and a barrier height of 0.16eV. Combining the characteristics of the two photoelectric response characteristics, the advantages are complemented. It greatly improves the applicable environment of the device, expands the application space of the photodetector, and provides a new idea for the preparation of the photodetector
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