Development of Solution-Processed p-Type Polycrystalline SnSe Thermoelectric Nanomaterials

SnSe has emerged as a promising mid-temperature thermoelectric (TE) material, noted for its intrinsically low lattice thermal conductivity and favorable electronic properties. Solution-processing provides a scalable and adaptable approach to synthesizing polycrystalline SnSe, allowing for precise control over nanostructure, defect density, and dopant distribution, which are essential factors in optimizing TE performance. Advances in doping/alloying, defect engineering and surface functionalization have been shown to enhance carrier concentrations, Seebeck coefficients, and reduced lattice thermal conductivity in p-type SnSe, resulting in notable TE efficiency. However, achieving comparable efficiency in solution-processed n-type SnSe remains challenging due to limited electron carrier concentration. In addition, low carrier mobility further limits the TE performance of polycrystalline SnSe at low temperatures. This perspective briefly explores the development of solution-processed SnSe nanostructures, with a focus on ongoing advancements in processing techniques and optimization strategies essential for promoting solution-processed SnSe toward practical TE applications.