Soft Sputtering of Large‐Area 2D MoS2 Layers Using Isolated Plasma Soft Deposition for Humidity Sensors

Abstract 2D transition‐metal dichalcogenides are emerging as key materials for next‐generation semiconductor technologies owing to their tunable bandgaps, high carrier mobilities, and exceptional surface‐to‐volume ratios. Among them, molybdenum disulfide (MoS 2 ) has garnered significant attention. However, scalable wafer‐level deposition methods that enable uniform layer‐controlled synthesis remain a critical challenge. In this paper, a novel fabrication approach—isolated plasma soft deposition (IPSD) followed by sulfurization—for the scalable production of 2D MoS 2 with precise layer control is introduced. The IPSD system employs a scanning‐based deposition method combined with plasma surface pretreatment, achieving large‐area, high‐quality 2D MoS 2 layers. Comprehensive characterizations using Raman, UV–vis, and photoluminescence spectroscopy, and transmission electron microscopy confirmed the successful synthesis of crystalline mono‐ to tetralayer 2D MoS 2 on 6‐inch SiO 2 /Si substrates. Furthermore, respiration sensors fabricated using the IPSD‐grown 2D MoS 2 layers demonstrated fast response times (≈1 s) and high response to relative humidity levels between 30% and 60%. This study offers significant advancements in the scalable synthesis of 2D MoS 2 and opens new avenues for its application in advanced sensing and electronic devices.