自旋电子学
异质结
材料科学
石墨烯
之字形的
石墨烯纳米带
凝聚态物理
半导体
密度泛函理论
带隙
氮化硼
范德瓦尔斯力
自旋极化
偏压
光电子学
纳米技术
电压
铁磁性
物理
量子力学
分子
几何学
数学
电子
作者
Yunfei Gao,Lei Xu,Aolin Li,Fangping Ouyang
标识
DOI:10.1016/j.rinp.2023.106315
摘要
It is an important topic in spintronics to find regulable half-metallic materials. In this work, by using density functional theory and nonequilibrium Green’s functional method, we find that the van der Waals heterostructures formed by zigzag-edged boron nitride nanoribbons and zigzag-edged graphene nanoribbons (ZGNRs) are spin splitting semiconductors. The energy band gap of the heterostructures can be regulated by applying a local voltage and the semiconductor–metal–semiconductor phase transition can be realized. Two spin-dependent transport devices are constructed based on the heterostructures. One device can generate a fully spin-polarized current within a small bias range, and the other device can generate high spin polarization within a large bias range. Moreover, based on zigzag-edged graphene/boron nitride nanoribbon (ZGBNNR) heterostructures, a dual-probe device with double vertical gates in the electrode regions is designed, which can form a metal–semiconductor–metal tunneling device. These findings indicate that ZGBNNRs can be used in excellent spintronic devices.
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