储能
材料科学
兴奋剂
电场
电介质
电容器
光电子学
极化(电化学)
航程(航空)
分析化学(期刊)
纳米技术
电气工程
电压
化学
复合材料
热力学
物理
功率(物理)
物理化学
色谱法
量子力学
工程类
作者
Thi Hien,Nguyen Tan Hung,Guus Rijnders,Minh Dung Nguyen
标识
DOI:10.1016/j.jallcom.2023.171837
摘要
The stability of high energy-storage performance dielectric-film capacitors with respect to frequency, temperature, and cycle number is very essential for developing energy-storage devices. Here, the impact of Sm-doping concentration on the structure and energy-storage stability of lead-free Ba(Zr0.35Ti0.65)O3 (BZT) films have been systematically investigated. The formation of random electric fields, due to the co-occupying heterovalent ions of Sm3+/Ti4+ at the B-sites, serves to enhance the breakdown strength and reduce the polarization reversibility. As a result, an enhanced recoverable energy-storage density of 133.3 J/cm3 and an excellent energy efficiency of 89.4% are simultaneously achieved in 25 mol% Sm-doped BZT films (BZT-Sm25) under an applied electric field of 7.0 MV/cm. In addition, the BZT-Sm25 films also exhibit outstanding energy-storage performance stability over a large frequency-range of 1–1000 Hz, a wide temperature-range of 25 °C–200 °C, and beyond 1010 switching-cycles, even under a high electric field of 6 MV/cm. These achieved results demonstrate that the Sm-doped BZT films are promising candidates for the development of high-performance and environmentally friendly energy-storage devices.
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