Highly-rectified hybrid p-MAPbBr3/n-GaN heterojunction ultraviolet photodetector featuring high-photoresponse

Abstract GaN-based photodetectors have demonstrated promising performance and find wide applications in ultraviolet sensing. In recent times, perovskite materials have also attracted significant attention due to their intriguing photoelectrical properties. In this study, we constructed a heterojunction photodetector by combining MAPbBr 3 and GaN, and examined its detection capabilities. We conducted measurements of the current–voltage and current–time characteristics of the device. Our results showcased superior detection metrics, including a rectification ratio of 2.57 × 10 6 and a photo-to-dark current ratio of 1.52 × 10 5 . Meanwhile, a responsivity of 1.02 A W −1 , a detectivity of 4.81 × 10 13 Jones and an external quantum efficiency of 346.8% under −5 V bias were achieved. Responsivity, detectivity and external quantum efficiency are significantly improved in the forward condition at the expense of low photo-to-dark current ratio and high dark current. The self-driven characteristics, non-linear photocurrent, and the persistent photoconductive effect observed in the photodetector were also discussed. Additionally, we provided guidance for further enhancements of the hybrid perovskite/GaN ultraviolet photodetector.