材料科学
储能
电介质
无定形固体
微电子
薄膜
纳米晶材料
光电子学
功率密度
微观结构
复合材料
纳米技术
功率(物理)
化学
物理
有机化学
量子力学
作者
Boying Wang,Hao Wang,Jiantao Wang,Chaolong Li,Feng Wang,Chunli Diao,Haiwu Zheng
标识
DOI:10.1016/j.jallcom.2023.171756
摘要
Dielectric thin film capacitors are expected to be a promising candidate for high-performance energy storage devices due to their high power density, fast charge/discharge speed, and excellent stability. Nevertheless, it remains a challenging endeavor to develop dielectrics with excellent energy storage density comparable to that of commercial batteries. In this work, lead-free 0.8SrTiO3-0.2BiFeO3 (0.8STO-0.2BFO) thin films with coexisting amorphous and nanocrystalline structure were prepared by a sol-gel method. The heat-treatment temperature was adjusted to form polar-nano regions, thereby modulate the breakdown strength and dielectric polarization, and increase the energy storage density. The electric potential, electric field, and current density of the films with different amorphous/crystalline volume fractions were evaluated by the finite element simulation to further verify that the proper crystallization can result in the improved polarization performance and increased breakdown strength of the films, which are beneficial to the enhancement of energy storage performance. Through structural tailoring, the 0.8STO-0.2BFO film annealed at 550 °C demonstrates the optimal energy storage properties with a giant discharge energy storage density of 65 J/cm3 and high efficiency of 75% at room temperature. Simultaneously, a broad temperature stability (20-160 °C), superb operating frequency stability (20 Hz-2 kHz), and excellent fatigue endurance (6.3×105) are observed without appreciable degradation of the energy storage performance. The excellent energy storage performance indicates a widespread potential of 0.8STO-0.2BFO films in pulse power applications, such as consumer electronics, microelectronics, and medical devices.
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