蚀刻(微加工)
钌
材料科学
碱金属
半导体
制作
反应离子刻蚀
电介质
纳米技术
沉积(地质)
干法蚀刻
选择性
光电子学
化学工程
化学
催化作用
工程类
有机化学
替代医学
图层(电子)
古生物学
病理
生物
医学
沉积物
作者
Yuki Kikkawa,Yuzan Suzuki,Kohei Saito,Hiroto Yarimizu,Satoko Kanamori,Tomoaki Sato,Toru Nagashima
出处
期刊:Solid State Phenomena
日期:2023-08-14
卷期号:346: 325-330
被引量:1
摘要
Wet chemicals for ruthenium (Ru) etching are required for the formation of reliable Ru interconnects in advanced semiconductor technology nodes. In the present study, a novel alkali wet etchant, referred to as TK-1, has been developed in order to overcome issues with conventional Ru etchants, such as a low etch rate and the formation of toxic RuO 4 gas. Regardless of the Ru deposition process, TK-1 exhibits a high Ru etching selectivity of greater than 100 relative to dielectric and liner materials. It also suppresses the production of RuO 4 during the etching process. TK-1 has potential applications for Ru recess etching during fully self-aligned via fabrication.
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