Enhancing WPE for AlGaN-based DUV LEDs using a hybrid heterostructure and recessed electrodes design

N insertion layer to construct a hetero-structure and proper-depth recess n-electrodes exhibits twice the current density and 38.7% WPE improvement related to the conventional LED. Numerical calculations reveal that the hybrid n-contact structure can enhance electron injection efficiency and radiative recombination efficiency by modulating electron transport processes. This study offers a feasible strategy for AlGaN-based DUV LEDs to reduce electrical turn-on voltage and improve optical efficiency.