Two-Dimensional Materials, the Ultimate Solution for Future Electronics and Very-Large-Scale Integrated Circuits

Abstract The relentless down-scaling of electronics grands the modern integrated circuits (ICs) with the high speed, low power dissipation and low cost, fulfilling diverse demands of modern life. Whereas, with the semiconductor industry entering into sub-10 nm technology nodes, degrading device performance and increasing power consumption give rise to insurmountable roadblocks confronted by modern ICs that need to be conquered to sustain the Moore law’s life. Bulk semiconductors like prevalent Si are plagued by seriously degraded carrier mobility as thickness thinning down to sub-5 nm, which is imperative to maintain sufficient gate electrostatic controllability to combat the increasingly degraded short channel effects. Nowadays, the emergence of two-dimensional (2D) materials opens up new gateway to eschew the hurdles laid in front of the scaling trend of modern IC, mainly ascribed to their ultimately atomic thickness, capability to maintain carrier mobility with thickness thinning down, dangling-bonds free surface, wide bandgaps tunability and feasibility to constitute diverse heterostructures. Blossoming breakthroughs in discrete electronic device, such as contact engineering, dielectric integration and vigorous channel-length scaling, or large circuits arrays, as boosted yields, improved variations and full-functioned processor fabrication, based on 2D materials have been achieved nowadays, facilitating 2D materials to step under the spotlight of IC industry to be treated as the most potential future successor or complementary counterpart of incumbent Si to further sustain the down-scaling of modern IC.