Emission enhancement of GaN field emitter arrays in an N2 environment

Field emitter arrays (FEAs) have the potential to operate at high frequencies and in harsh environments. However, the vacuum packaging of these devices poses a challenge due to the sensitivity of the emission phenomena to the surface properties of the cathode. Studying the effect of different residual gases on FEAs can help to understand the interaction of the emission surface with the environment and identify the feasibility and requirements for vacuum packaging. In this work, the effect of N2 exposure on 150 × 150 gallium-nitride-field emitter arrays (GaN-FEAs) was studied. The GaN-FEA was first operated at 10−9 Torr with a 1000 V DC anode voltage and a 50 V DC gate voltage, where the anode current was 6 μA. The device was then exposed to 10 000 l N2 at 10−7 Torr, and the anode current increased by 2.7 times during N2 exposure. The increase in the current was not permanent, and the current gradually decreased to its pre-exposure level after the N2 source was cut off. The results of N2 exposure were compared to Ar and O2.