材料科学
击穿电压
肖特基二极管
光电子学
雪崩击穿
半导体
肖特基势垒
电场
共聚物
晶体管
电气故障
电压
电气工程
复合材料
聚合物
二极管
电介质
工程类
物理
量子力学
作者
Jun Zhang,Man Li,Jing Chen,Maolin Zhang,Jiafei Yao,Guobin Zhang,Song Bai,Yufeng Guo
摘要
Organic field-effect transistors have demonstrated their outstanding off-state breakdown performance. Yet, the physical nature of their electric breakdown remains unexplored. In this paper, by employing a lateral back-to-back Schottky junction composed of diketopyrrolopyrrole-based conjugated copolymer (DPPT-TT) and Au metal, the breakdown performance of copolymer organic semiconductor (OSC) is experimentally demonstrated. The nondestructive/repeatable breakdown behavior and positive coefficient between temperature and breakdown voltage indicate that the avalanche-like breakdown mechanism plays a dominant role in determining the breakdown characteristic of OSC-based power devices. Based on the lateral back-to-back Schottky junction, a characterization method of key breakdown parameters is proposed. The extracted critical electric field (EC) of DPPT-TT is up to 5.0 MV/cm, which is more than one order of magnitude higher than that of single-crystal silicon. Despite the fact that copolymer OSCs are narrow bandgap semiconductors, they still deliver excellent breakdown performance, making them a promising building block for future power electronics.
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