A Novel Design of P Implanted Regions for a Power MOSFET
作者
Wen-Bin Yeh,Y. K. Su,Kung‐Yen Lee,Chia‐Hui Cheng,Chih‐Fang Huang
标识
DOI：10.1109/imfedk.2018.8581972
摘要
In this paper, a novel structure for a vertical power MOSFET is designed to have higher breakdown voltage and lower specific on-state resistance compared with a conventional vertical power MOSFET.
PDF的下载单位、IP信息已删除
(2025-6-4)
Nole
东方元语
yjh123
cdercder
v0id
张欢馨
xing_xing
Kao
dde
OK
woshi123
学术文献互助
aajhajkahna
pluto
昏睡的蟠桃
啵啵
松2026
天晴
行走的荷尔蒙
ansteel
皖公网安备34019202002308
