绝缘栅双极晶体管
电感
电气工程
瞬态(计算机编程)
等效串联电感
电子工程
功率(物理)
功率半导体器件
工程类
电压
电源模块
计算机科学
物理
量子力学
操作系统
作者
Xin Li,Yong Luo,Yaoqiang Duan,Binli Liu,Yongle Huang,Fengxin Sun
标识
DOI:10.1109/peac.2018.8590475
摘要
Stray inductance has an important influence on the characteristics of power electronic devices as well as switching devices themselves. Influenced by stray inductance, the insulated gate bipolar transistor (IGBT) induces high voltage peak in the switching transient process. The high-voltage peak will affect the reliability of a power electronic device like inverter. Considering the switching transient is most beneficial to the extraction of stray inductance and based on the integrating method, this paper proposes an appropriate method of extracting the stray inductance for a high-power IGBT dynamic test platform. The IGBT dynamic test platform made by LEMSYS is used to test the 3.3kV/1.5kA IGBT module under different load conditions. Then its loop stray inductance and parasitic inductance are extracted by the proposed method. Finally, the established lumped charge physical models of IGBT and fast recovery diode (FRD) are applied to verifying that the proposed method is practicable and effective.
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