锌黄锡矿
材料科学
能量转换效率
导带
载流子寿命
兴奋剂
捷克先令
二甲基亚砜
异质结
油胺
光电子学
纳米晶
无辐射复合
化学工程
价带
化学
二极管
带隙
重组
无机化学
载流子
锂(药物)
固溶体
太阳能电池
接受者
杂质
光化学
电子迁移率
作者
Shiliang Xiao,Chunxu Xiang,Yize Li,Yuanyuan Zheng,Xinyu Li,Na Zhao,Haoyu Guo,Youyou Yuan,Shaoying Wang,Weibo Yan,Hao Xin
出处
期刊:Solar RRL
[Wiley]
日期:2026-05-26
卷期号:10 (11)
摘要
Kesterite Cu 2 ZnSn (S,Se) 4 (CZTSSe) solar cells, as an emerging class of inorganic photovoltaics, offer promising application prospects owing to their earth‐abundant and environmentally benign constituent elements, as well as a high theoretical power conversion efficiency. However, the relatively low majority carrier concentration, detrimental band tailing induced by bulk Cu–Zn disorder defects, and severe interface recombination limit further improvement in device efficiency. In a dimethyl sulfoxide (DMSO) solution system, extrinsic cation doping with Li + and Cd 2+ was introduced to optimize both bulk and interfacial properties of the CZTSSe absorber. The results show that the co‐incorporation of Li and Cd into the absorber significantly improves its crystallinity, reduces defect density, and suppresses band tailing states, while simultaneously enhancing the hole carrier concentration of CZTSSe. Furthermore, Li + Cd co‐doping results in more favorable conduction band offset (CBO) at CZTSSe/CdS heterojunction interface compared to the control group, which effectively reduces carrier recombination and enhances carrier collection efficiency, achieving a power conversion efficiency of 14.2% for the champion device.
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