薄膜
材料科学
兴奋剂
氧化镉
基质(水族馆)
结晶度
溅射沉积
带隙
电阻率和电导率
铝
分析化学(期刊)
硅
X射线光电子能谱
溅射
光电子学
镉
冶金
复合材料
纳米技术
化学
化学工程
工程类
地质学
电气工程
海洋学
色谱法
作者
Biswajit Saha,Soumen Das,Kalyan Kumar Chattopadhyay
标识
DOI:10.1016/j.solmat.2007.05.025
摘要
Cadmium oxide thin films with different percentages of aluminum doping have been synthesized via radio frequency magnetron sputtering technique. Thin films were deposited on glass and silicon substrates with different percentages of aluminum at a substrate temperature of 573 K and pressure of 0.1 mbar in Ar+O2 atmosphere. The deposited films were characterized by studying their structural, electrical and optical properties. The X-ray diffraction pattern revealed good crystallinity with preferred (1 1 1) orientation in the films. Aluminum doping in CdO thin films were confirmed by X-ray photoelectron spectroscopic studies and actual doping percentages were also measured from it. The optical band gap was found to decrease first and then increase with increasing percentages of aluminum concentrations. The electrical conductivity was found to increase with increase of aluminum doping concentration up to 5% but for higher doping concentration (>5%) the conductivity was found to decrease.
科研通智能强力驱动
Strongly Powered by AbleSci AI