材料科学
光电子学
二极管
光电流
异质结
半导体
拉曼光谱
堆积
纳米电子学
肖特基二极管
纳米技术
光学
化学
物理
有机化学
作者
Hyun Jeong,Hye Min Oh,Seungho Bang,Hyobin Jeong,Sung Jin An,Gang Han,Hyun Kim,Seok Joon Yun,Ki Kang Kim,Jin Cheol Park,Young Hee Lee,Gilles Lérondel,Mun Seok Jeong
出处
期刊:Nano Letters
[American Chemical Society]
日期:2016-02-19
卷期号:16 (3): 1858-1862
被引量:71
标识
DOI:10.1021/acs.nanolett.5b04936
摘要
We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.
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