材料科学
光电效应
电场
吸收(声学)
光电探测器
半导体
光电子学
领域(数学)
物理
数学
量子力学
复合材料
纯数学
作者
Yue Chen,Xiansheng Tang,Yangfeng Li,Wenqi Wang,Xinxin Li,Junyang Zhang,Zhen Deng,Chunhua Du,Haiqiang Jia,Wenxin Wang,Wei Lu,Yang Jiang,Hong Chen
出处
期刊:Chinese Physics B
[IOP Publishing]
日期:2021-03-23
卷期号:30 (9): 097803-097803
被引量:1
标识
DOI:10.1088/1674-1056/abf10c
摘要
The optical absorption is the most important macroscopic process to characterize the microscopic optical transition in the semiconductor materials. Recently, great enhancement has been observed in the absorption of the active region within a p–n junction. In this paper, GaAs based p–i–n samples with the active region varied from 100 nm to 3 μm were fabricated and it was observed that the external quantum efficiencies are higher than the typical results, indicating a new mechanism beyond the established theories. We proposed a theoretical model about the abnormal optical absorption process in the active region within a strong electric field, which might provide new theories for the design of the solar cells, photodetectors, and other photoelectric devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI